Strain relaxation of pseudomorphic Si1−xGex∕Si(100) heterostructures after Si+ ion implantation
نویسندگان
چکیده
منابع مشابه
PSEUDOMORPHIC AND RELAXED GeSi:Si HETEROSTRUCTURES FORMED BY ION IMPLANTATION FOR HETEREPITAXIAL TEMPLATES
A method of forming Ge xSi1-x films by thermal oxidation of Ge -implanted Si is presented. The process involves the segregation of the implanted Ge during oxidation to form a distinct Ge -rich layer at the oxide interface. The composition of the segregated layer can be altered by varying the oxidation conditions as a result of the kinetic competition between oxidation and the interdiffusion of ...
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متن کاملRelaxation of Misfit-Induced Strain in Semiconductor Heterostructures
Using examples from SiGe solid solutions grown onto (001)Si substrates from metallic solutions (liquid phase epitaxy) we discuss the different mechanisms by which misfitting systems can relax the strain caused by pseudomorphic growth. We treat elastic, plastic and diffusive relaxation and their interdependence. As an extension we discuss additional relaxation mechanisms, though possibly not ver...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2004
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1765851